H. Chou, P. Su, J. Ng, P. L. Wang, H. T. Lu, C. J. Lee, W. Syue, S. Y. Yang, Y. Tseng, C. C. Cheng, C. Yao, R. Liou, Y. Jong, J. Tsai, J. Cai, H. Tuan, Chih-Fang Huang, J. Gong
{"title":"0.18 µm BCD technology platform with best-in-class 6 V to 70 V power MOSFETs","authors":"H. Chou, P. Su, J. Ng, P. L. Wang, H. T. Lu, C. J. Lee, W. Syue, S. Y. Yang, Y. Tseng, C. C. Cheng, C. Yao, R. Liou, Y. Jong, J. Tsai, J. Cai, H. Tuan, Chih-Fang Huang, J. Gong","doi":"10.1109/ISPSD.2012.6229106","DOIUrl":null,"url":null,"abstract":"This paper presents a single BCD technology platform with high performance power devices at a wide range of operating voltages. The platform offers 6 V to 70 V LDMOS devices. All devices offer best-in-class specific on-resistance of 20 to 40 % lower than that of the state-of-the-art IC-based LDMOS devices and robustness better than the square SOA (safe-operating-area). Fully isolated LDMOS devices, in which independent bias is capable for circuit flexibility, demonstrate superior specific on-resistance (e.g. 11.9 mΩ-mm2 for breakdown voltage of 39 V). Moreover, the unusual sudden current enhancement appeared in the ID-VD saturation region of most of the high voltage LDMOS devices is significantly suppressed.","PeriodicalId":371298,"journal":{"name":"2012 24th International Symposium on Power Semiconductor Devices and ICs","volume":"20 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"19","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 24th International Symposium on Power Semiconductor Devices and ICs","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.2012.6229106","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 19
Abstract
This paper presents a single BCD technology platform with high performance power devices at a wide range of operating voltages. The platform offers 6 V to 70 V LDMOS devices. All devices offer best-in-class specific on-resistance of 20 to 40 % lower than that of the state-of-the-art IC-based LDMOS devices and robustness better than the square SOA (safe-operating-area). Fully isolated LDMOS devices, in which independent bias is capable for circuit flexibility, demonstrate superior specific on-resistance (e.g. 11.9 mΩ-mm2 for breakdown voltage of 39 V). Moreover, the unusual sudden current enhancement appeared in the ID-VD saturation region of most of the high voltage LDMOS devices is significantly suppressed.
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