Millimeter-wave silicon transistor and benchmark circuit scaling through the 2030 ITRS horizon

Abstract

This paper reviews the technology requirements of future mm-wave systems-on-chip and the challenges facing mm-wave MOSFET and SiGe HBT device and benchmark circuit scaling towards 3nm gate length and beyond 1.5THz fMAX. Measurements of state-of-the-art MOSFETs, HBTs and cascodes are presented from DC to 325 GHz. Finally, simulations of the scaling of the SiGe HBT mm-wave benchmark circuit performance across future technology nodes predict that PAs with 45% PAE at 220 GHz, and transimpedance amplifiers with over 175GHz bandwidth and less than 3dB noise figure will become feasible by the year 2030.