Development of microstrip gas chambers on resistive supports

R. Bouclier, G. Million, J. Florent, J. Gaudaen, L. Ropelewski, F. Sauli, L. Shekhtman
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Abstract

Summary form only. Recent developments of microstrip gas chambers (MSGCs) manufactured on various semiconducting glass and plastic supports are discussed. While in all cases short-term measurements indicate a rate capability up to and above 5*10/sup 5/ counts/s-mm/sup 2/, long-term exposure to radiation shows gain modifications, the larger the higher the resistivity of the chamber substrate, possibly due to surface charging-up. A choice of low-resistivity supports minimizes this effect. MSGCs on semiconducting glasses in the range between 10/sup 9/ to 10/sup 15/ Omega -cm and on plastic foils, (Tedlar, Kapton, ion-implanted Kapton, and Upilex) with equivalent surface resistivities between 10/sup 11/ and 10/sup 17/ Omega /square have been realized. For the more conducting supports, aging phenomena seem to appear at the highest integral fluxes, more or less pronounced depending on the gas and the materials used, in particular for the electrodes.<>
电阻支撑微带气体室的研制
只有摘要形式。讨论了在各种半导体玻璃和塑料支架上制造微带毒气室的最新进展。虽然在所有情况下,短期测量表明速率能力高达或高于5*10/sup 5/计数/s-mm/sup 2/,但长期暴露于辐射显示增益变化,越大,腔体衬底的电阻率越高,可能是由于表面充电。选择低电阻率支架可以最大限度地减少这种影响。半导体玻璃上的msgc范围在10/sup 9/至10/sup 15/ Omega -cm之间,以及塑料箔(Tedlar, Kapton,离子注入Kapton和Upilex)上,等效表面电阻率在10/sup 11/和10/sup 17/ Omega /square之间已经实现。对于导电性较强的支撑物,老化现象似乎出现在最高积分通量处,根据所用气体和材料的不同或多或少明显,特别是电极
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