III-V-semiconductor vertically-coupled whispering-gallery mode resonators made by selective lateral oxidation

SPIE LASE Pub Date : 2016-04-22 DOI:10.1117/12.2210968
S. Calvez, G. Lafleur, C. Arlotti, Alexandre Larrue, Pierre-François Calmon, A. Arnoult, G. Almuneau, O. Gauthier-Lafaye
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引用次数: 2

Abstract

Integrated whispering-gallery mode resonators are attractive devices which have found applications as selective filters, low-threshold lasers, high-speed modulators, high-sensitivity sensors and even as nonlinear converters. Their performance is governed by the level of detrimental (scattering, bulk, bending) loss incurred and the usable loss represented by the coupling rate between the resonator and its access waveguide. Practically, the latter parameter can be more accurately controlled when the resonator lies above the access waveguide, in other words, when the device uses a vertical integration scheme. So far, when using such an integration technique, the process involved a rather technically challenging step being either a planarization or a substrate transfer step. In this presentation, we propose and demonstrate an alternative method to fabricate vertically-coupled whispering-gallery mode resonators on III-V semiconductor epitaxial structures which has the benefit of being planarization-free and performed as single-side top-down process. The approach relies on a selective lateral thermal oxidation of aluminum-rich AlGaAs layers to define the buried access waveguide and enhance the vertical confinement of the whispering-gallery mode into the resonator. As a first experimental proof-of-principle of this approach, 75 µm-diameter micro-disk devices exhibiting quality factor reaching ~4500 have been successfully made.
由选择性横向氧化制成的iii - v型半导体垂直耦合低语廊模式谐振器
集成窃语廊模式谐振器是一种有吸引力的器件,已被应用于选择性滤波器、低阈值激光器、高速调制器、高灵敏度传感器甚至非线性变换器。它们的性能取决于产生的有害(散射、体积、弯曲)损耗水平和谐振器与其接入波导之间的耦合率所表示的可用损耗。实际上,当谐振器位于接入波导上方时,后一个参数可以更精确地控制,换句话说,当器件使用垂直集成方案时。到目前为止,当使用这种集成技术时,该过程涉及一个相当具有技术挑战性的步骤,要么是平面化,要么是基板转移步骤。在本报告中,我们提出并演示了一种在III-V半导体外延结构上制造垂直耦合低语廊模式谐振器的替代方法,该方法具有无平面化和单面自上而下的优点。该方法依赖于富铝AlGaAs层的选择性横向热氧化来定义埋地接入波导,并增强耳语通道模式进入谐振器的垂直限制。作为该方法的第一个实验原理证明,75 μ m直径的微磁盘器件已成功制成,其质量因子达到~4500。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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