Design and Implementation of 100W GaN HEMT Power Amplifier in UHF band

Abstract

This paper presents design and implementation of a power amplifier using packaged GaN HEMT (High electron mobility transistor) device and delivering an output power of 100W at 1-dB compression in UHF (400–450 MHz) band. To drive this 100W power amplifier, a driver amplifier delivering 10 W linear output power has also been designed. Both the amplifiers have been designed and integrated in the total chain delivering an output power of 1KW.