CdTe Thin Film PV: How Has the Technology Evolved and What Challenges Lie Ahead

C. Ferekides, C. Hsu
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Abstract

This paper reviews the evolution of CdTe photovoltaics since the first CdTe/CdS solar cells were reported in the early 70’s with modest efficiencies (~5%). Today’s commercial CdTe thin film modules have areas of 2.5 m2 and efficiencies of 17–18%; small area cells are over 22% efficiency. In reaching this performance, the typical/original CdTe/CdS hetero-structure evolved into a CdTe/Cd(Se)Te/MZO (Magnesium Zing Oxide). The technology continues to rely on a post-deposition heat-treatment (in the presence of CdCl2), and the use of Cu (p-type dopant) for the formation of the back contact. Advancing performance to higher levels will depend on the CdTe community’s ability to address key device and material properties (net p-type doping) that limit the cell’s open circuit voltage to 0.9 Volts.
CdTe薄膜光伏:技术如何发展以及未来的挑战
本文回顾了自70年代初第一批CdTe/CdS太阳能电池被报道以来CdTe光伏电池的发展,其效率适中(~5%)。目前商业化的CdTe薄膜组件的面积为2.5 m2,效率为17-18%;小面积电池的效率超过22%。在达到这种性能的过程中,典型/原始CdTe/CdS异质结构演变为CdTe/Cd(Se)Te/MZO(氧化镁)。该技术继续依赖于沉积后热处理(在CdCl2存在的情况下),并使用Cu (p型掺杂剂)形成背触点。将性能提升到更高的水平将取决于CdTe社区解决关键器件和材料特性(净p型掺杂)的能力,这些特性将电池的开路电压限制在0.9伏。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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