Performance comparison and device analysis Between Si IGBT and SiC MOSFET

Abstract

The paper presents the characteristics of the latest commercial 1200V 300A SiC MOSFET module and compares it's performance with Si IGBT with the same rating using experimental results and the saber software environment. Our SiC MOSFET model in SABER gives accurate results across a wide range of temperatures. The results show that the 1200V SiC MOSFET has faster switching speed and significantly less switching loss compared to the Si IGBT. Moreover, the Si IGBT switching loss will increase significantly for higher operation temperature, while the SiC MOSFET switching loss has little variation over different temperatures. This paper will also investigates the stray inductance effect on the gate, drain, and source side and verifies its performance with Si IGBT. The double pulse test circuit has been implemented in SABER to simulate the dynamic losses and a brief review of the various applications for automotive industry of the SiC MOSFET has been also presented in the paper.