K. Krishnamurthy, J. Martin, D. Aichele, D. Runton
{"title":"A Decade Bandwidth 90 W GaN HEMT Push-Pull Power Amplifier for VHF / UHF Applications","authors":"K. Krishnamurthy, J. Martin, D. Aichele, D. Runton","doi":"10.1109/CSICS.2011.6062484","DOIUrl":null,"url":null,"abstract":"A decade bandwidth 90 W, GaN HEMT push-pull power amplifier has been demonstrated. The power amplifier exhibits 18 dB small-signal gain with 20-1100 MHz 3-dB bandwidth and obtains 82.2-107.5 W CW output power with 51.9-73.8 % drain efficiency and 15.2-16.3 dB power gain over the 100-1000 MHz band. The push-pull power amplifier occupies a 2 x 2 inch PCB area and uses a novel compact broadband low loss coaxial coiled 1:1 balun to combine two 45 W packaged broadband lossy matched GaN HEMT amplifiers matched to 25 U. The packaged amplifiers contain a GaN on SiC HEMT operating at 50 V drain voltage with integrated passive matching circuitry on GaAs substrate. These amplifiers are targeted for use in multi-band multi-standard communication systems and for instrumentation applications.","PeriodicalId":275064,"journal":{"name":"2011 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CSICS.2011.6062484","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 6
Abstract
A decade bandwidth 90 W, GaN HEMT push-pull power amplifier has been demonstrated. The power amplifier exhibits 18 dB small-signal gain with 20-1100 MHz 3-dB bandwidth and obtains 82.2-107.5 W CW output power with 51.9-73.8 % drain efficiency and 15.2-16.3 dB power gain over the 100-1000 MHz band. The push-pull power amplifier occupies a 2 x 2 inch PCB area and uses a novel compact broadband low loss coaxial coiled 1:1 balun to combine two 45 W packaged broadband lossy matched GaN HEMT amplifiers matched to 25 U. The packaged amplifiers contain a GaN on SiC HEMT operating at 50 V drain voltage with integrated passive matching circuitry on GaAs substrate. These amplifiers are targeted for use in multi-band multi-standard communication systems and for instrumentation applications.