Junction field effect transistors as radiation detectors

Abstract

The use of junction field effect transistors (JFETs) as radiation detectors is described. Measurements of the energy resolution of n-channel JFETs operated as X-ray spectrometers are presented. An energy resolution of 210 eV FWHM at 5.9 keV was obtained at room temperature using a commercially available JFET as a detector. An analysis of the behavior of JFETs as X-ray spectrometers is presented together with suggestions on designing future devices specifically for use as radiation detectors. It is concluded that detectors approaching the performance of cooled Si(Li) detectors but capable of operating at room temperature could be made from JFETs.<>