Control and generation of domain walls near magnetic compensation in ferrimagnetic CoTb via applied thermal gradient

R. Tolley, T. Liu, T. Hauet, M. Hehn, G. Lengaigne, E. Fullerton, S. Mangin
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Abstract

Recently, the manipulation of domain walls using magnetic field [1] spin polarized current [2] electric field [3] and temperature gradient [4] have attracted significant interest. This control of domain wall nucleation and propagation could lead to new advances in the field of data storage [5] and magnetic logic [6]. Here we report on the use of a thermal gradient to nucleate, propagate and annihilate well-defined domain walls. The domain walls are created in lithographically patterned wires of amorphous, ferrimagnetic CoTb alloy thin films. The net magnetization of these films is defined by the competition between the magnetization of the antiferromagnetically coupled Co sublattice and Tb sublattice. For some compositions, there exists a given temperature known as the compensation temperature (Tcomp), where the net saturation magnetization of the sample is zero due to the equal magnitude and opposite direction of the two competing sublattice moments. Below Tcomp, the net magnetization of the film aligns along the dominant Tb magnetization, while above Tcomp the direction of the magnetization is controlled by the Co sublattice. By crossing this compensation temperature under applied field, it is possible to change the dominant sublattice - creating a shift in the net magnetization direction of the film.
应用热梯度对铁磁CoTb中磁补偿附近畴壁的控制和产生
近年来,利用磁场[1]、自旋极化电流[2]、电场[3]和温度梯度[4]对畴壁的操纵引起了人们极大的兴趣。这种对畴壁成核和传播的控制可能会导致数据存储和磁逻辑领域的新进展。在这里,我们报告了利用热梯度来形成核,传播和湮灭定义明确的畴壁。畴壁是在非晶铁磁CoTb合金薄膜的光刻图纹线中形成的。这些薄膜的净磁化强度由反铁磁耦合的Co亚晶格和Tb亚晶格之间的磁化强度的竞争来定义。对于某些成分,存在一个给定的温度,称为补偿温度(Tcomp),其中样品的净饱和磁化为零,由于两个竞争的亚晶格矩的大小相等,方向相反。在Tcomp以下,薄膜的净磁化强度沿主导的Tb磁化方向排列,而在Tcomp以上,磁化方向由Co亚晶格控制。通过在外加磁场下跨越这个补偿温度,有可能改变主导亚晶格,从而使薄膜的净磁化方向发生位移。
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