Effect of doping on optoelectronic properties of Tin dioxide layers produced by chemical deposition

Abstract

Tin dioxide and metallic impurity (Cu, Fe) doped stannic oxide Nano layers were produced by chemical bath deposition method on glass substrates. The effects of doping on optoelectronic properties of stannic oxide Nano layers were studied. Optical Reflectance measured in the wavelength range of 220-2500 nm by spectrophotometer. Other optical properties and optical band gaps were calculated using Kramers-Kronig relations on reflectivity curves. Electronic properties were calculated by full potential linearized augmented plane wave (FP-LAPW) method, within density functional theory (DFT). In this approach, the generalized gradient approximation (GGA) in the form of the LSDA functional was used for the exchange-correlation potential calculations. Band gap structures and density of states were calculated. Doping impurity changes optical properties of Tin dioxide layers. Metallic impurities, especially copper, decreases the band gap energy and increases conductivity of layers. Value of band gap calculated by DFT method for SnO2 compound obtained 1.2 eV. All results are in good agreement with each other.