{"title":"Implementation and Realization of Power Amplifier in Two Types of Matching Network Style for LTE Application","authors":"Ahmed S. Al-Jawadi, K. H. Hamid, F. Aldabbagh","doi":"10.1109/ICEEE52452.2021.9415926","DOIUrl":null,"url":null,"abstract":"In this paper a Long-Term Evolution (LTE) Power amplifier (PA) is designed and realized, which is an important element in cellular communication systems, the design is acceptable for output power, gain, high efficiency, and linearity which obtained. This work presents the Power amplifier can be used in LTE applications. A class AB mode PA operating at 2.3 GHz with a low power supply voltage of 3.8 V is selected and realized using two types of matching network style (L-match and T-match). The work has been Simulated using GaAs FET by Advance Design System (ADS) software package. The results obtained from the designed PA using T-match style shows a reflection coefficient (S11) and power gain (S21) better than the L-match style, where the efficiency of both circuits is (67.8%). Additionally, the final paperwork is transferred to a Microstrips PA and a good result is achieved.","PeriodicalId":429645,"journal":{"name":"2021 8th International Conference on Electrical and Electronics Engineering (ICEEE)","volume":"332 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-04-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 8th International Conference on Electrical and Electronics Engineering (ICEEE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICEEE52452.2021.9415926","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
In this paper a Long-Term Evolution (LTE) Power amplifier (PA) is designed and realized, which is an important element in cellular communication systems, the design is acceptable for output power, gain, high efficiency, and linearity which obtained. This work presents the Power amplifier can be used in LTE applications. A class AB mode PA operating at 2.3 GHz with a low power supply voltage of 3.8 V is selected and realized using two types of matching network style (L-match and T-match). The work has been Simulated using GaAs FET by Advance Design System (ADS) software package. The results obtained from the designed PA using T-match style shows a reflection coefficient (S11) and power gain (S21) better than the L-match style, where the efficiency of both circuits is (67.8%). Additionally, the final paperwork is transferred to a Microstrips PA and a good result is achieved.