Amorphous Si/sub 1-x/Ge/sub x//p-type-Si Schottky barrier infrared photon detector

Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611) Pub Date : 2002-08-07 DOI:10.1109/ICCDCS.2002.1004058

R. Salazar, A. Jacome

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Abstract

In this work a new Schottky barrier infrared detector (SBIRD) is presented. The barrier is formed by means of a layer of a-Si/sub 1-x/Ge/sub x/:H,F deposited by means of (plasma enhanced chemical vapor deposition) PECVD on p-type silicon. The barrier height of the system was estimated from I-V, I-V-T and internal photoemission measurements, and showed a value of 0.2 eV at 77 K. When the SBIRD was operated at 77 K, it showed a cut-off wavelength of /spl sim/6 /spl mu/m. The responsivity and quantum efficiency as a function of the wavelength are compared with SBIRDs which use Pd/sub 2/Si and PtSi on p-type silicon to form the Schottky barrier.

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非晶Si/sub - 1-x/Ge/sub -x/ p型Si肖特基势垒红外光子探测器

本文介绍了一种新型肖特基势垒红外探测器(SBIRD)。通过(等离子体增强化学气相沉积)PECVD在p型硅上沉积a- si /sub - 1-x/Ge/sub -x/:H,F层形成屏障。系统的势垒高度由I-V、I-V- t和内部光发射测量得到，在77 K时势垒高度为0.2 eV。当SBIRD在77 K下工作时，其截止波长为/spl sim/6 /spl mu/m。与在p型硅上使用Pd/sub /Si和PtSi形成肖特基势垒的SBIRDs相比，其响应率和量子效率随波长的变化进行了比较。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611)

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