On-wafer Non-Fifty Ohm X-parameter Model Verification Measurement System for Active Device

Abstract

The paper proposes the on-wafer non-fifty ohm X-parameter model verification measurement system so that RF designer can verify the active device designed in nonlinear amplifier. The measured output power contours and power added efficiency (PAE) contours of the 0.15um pHEMT X-parameter model compared with those of the WIN semiconductor foundry process design kit (PDK) model shows good results in smith chart.