A Unified Framework for Error Correction in On-chip Memories

Frederic Sala, Henry Duwe, L. Dolecek, Rakesh Kumar
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引用次数: 4

Abstract

Many techniques have been proposed to improve the reliability of on-chip memories (e.g., caches). These techniques can be broadly characterized as being based on either errorcorrecting codes, side-information from built-in self test (BIST) routines, or hybrid combinations of the two. Although each proposal has been shown to be favorable under a certain set of assumptions and parameters, it is difficult to determine the suitability of such techniques in the overall design space. In this paper, we seek to resolve this problem by introducing a unified general framework representing such schemes. The framework, composed of storage, decoders, costs, and error rates, allows a full exploration of the design space of reliability techniques. We show how existing schemes can be represented in this framework and we use the framework to examine performance in the practical case of high overall and moderate BIST-undetectable fault rates. We show that erasure-based sideinformation schemes are less sensitive to BIST-undetectable errors compared to other techniques.
片上存储器纠错的统一框架
为了提高片上存储器(如缓存)的可靠性,已经提出了许多技术。这些技术可以大致地描述为基于错误纠正码、内置自检例程的附带信息,或者两者的混合组合。尽管每个方案在一定的假设和参数下都是有利的,但很难确定这些技术在整体设计空间中的适用性。在本文中,我们试图通过引入一个表示这些方案的统一通用框架来解决这个问题。该框架由存储器、解码器、成本和错误率组成,允许对可靠性技术的设计空间进行充分的探索。我们展示了如何在此框架中表示现有方案,并使用该框架来检查高总体和中等bist不可检测故障率的实际情况下的性能。我们表明,与其他技术相比,基于擦除的侧信息方案对bist无法检测到的错误不太敏感。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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