Microfabricated single crystal silicon transmission lines

T.D. Kudrle, H. Neves, N. MacDonald
{"title":"Microfabricated single crystal silicon transmission lines","authors":"T.D. Kudrle, H. Neves, N. MacDonald","doi":"10.1109/RAWCON.1998.709188","DOIUrl":null,"url":null,"abstract":"A novel approach to the transmission of microwave energy is demonstrated on standard (resistivity=1-20 ohm-cm) silicon. The transmission lines consist of pairs of parallel-plate waveguides, each waveguide formed from two deep (150 /spl mu/m) suspended single crystal silicon (SCS) beams. This transmission is achieved through the integration of SCREAM (single crystal reactive etching and metallization) technology adapted for very high aspect ratio structures with thick copper sputter deposition. The integration of these processes allows for the deposition of thick (>.5 /spl mu/m) metal on the sidewalls and attenuation characteristics better than 0.17 dB/mm over the 10-48 GHz frequency range.","PeriodicalId":226788,"journal":{"name":"Proceedings RAWCON 98. 1998 IEEE Radio and Wireless Conference (Cat. No.98EX194)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-08-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings RAWCON 98. 1998 IEEE Radio and Wireless Conference (Cat. No.98EX194)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RAWCON.1998.709188","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3

Abstract

A novel approach to the transmission of microwave energy is demonstrated on standard (resistivity=1-20 ohm-cm) silicon. The transmission lines consist of pairs of parallel-plate waveguides, each waveguide formed from two deep (150 /spl mu/m) suspended single crystal silicon (SCS) beams. This transmission is achieved through the integration of SCREAM (single crystal reactive etching and metallization) technology adapted for very high aspect ratio structures with thick copper sputter deposition. The integration of these processes allows for the deposition of thick (>.5 /spl mu/m) metal on the sidewalls and attenuation characteristics better than 0.17 dB/mm over the 10-48 GHz frequency range.
微加工单晶硅传输线
在标准(电阻率=1-20欧姆-厘米)硅上展示了一种新的微波能量传输方法。传输线由一对平行板波导组成,每个波导由两个深(150 /spl mu/m)悬浮单晶硅(SCS)光束组成。这种传输是通过集成SCREAM(单晶反应蚀刻和金属化)技术实现的,该技术适用于具有厚铜溅射沉积的高纵横比结构。这些过程的集成允许厚(>)的沉积。5 /spl mu/m)金属在侧壁上,在10- 48ghz频率范围内衰减特性优于0.17 dB/mm。
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