Very High-Speed Waveguide Integrated Germanium Photo Detectors

Abstract

We present a photodiode in which germanium is laterally sandwiched in between complementary in-situ doped silicon layers. We demonstrate optoelectrical 3-dB bandwidth ≥110 GHz with responsivities of 0.6 A/W at 1550 nm, and show, for the first time, results at 1310 nm wavelength.