GaAs tri-step high-low doping channel field effect transistor

Abstract

A fabricated camel-gate FET with a tri-step doping channel exhibits a large drain current density of >750 mA/mm. Furthermore, the relatively voltage-independent transconductance is as high as 220 mS/mm and the applied gate voltage is of up to +1.5 V. A 1.5/spl times/100 /spl mu/m/sup 2/ gate dimension device was found to have a f/sub T/ of about 30 GHz with very low input capacitance.