The Anomalous Photovoltaic Effect in Ferro and Piezoelectric Semiconductors and its Application for Optical Storage by Holography

DENSHI SHASHIN GAKKAISHI Pub Date : 1980-06-30 DOI:10.11370/ISJEPJ.18.54

V. Fridkin

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引用次数: 14

Abstract

The effect of nonequilibrium conductivity on the birefringence of ferro and piezoelectric semiconductors is referred to as photorefractive effect (PR effect) in the literaturel'2) and has been widely used for recording volume holograms3). In practice, the PR effect consists in the following. As a result of local illumination of a ferroelectric or piezoelectric crystal with an intense transient light (focused laser beam) a reversible change in birefringence occcrs in the crystal volume inside the light beam. The extent of this change may be as great as 10-4-l0-3 for some pyroelectrics (LiNb03, LiTa03) and the storage time of the effect varies over a very wide range, from milliseconds for BaTi03 to months for LiNb03. Hologram recording is accomplished by means of volume modulation An corresponding to that of the recording beams. The recording resolution is extremely high 102104lines/mm, which allows to reach the theoretical limits of three-dimensional storage density (1012bits/cm3). On the contrary to the photographic layers the major advantage of this method of optical storage is the parallel processing, which includes write-in, read-out and

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铁和压电半导体中的反常光伏效应及其在全息光存储中的应用

非平衡电导率对铁和压电半导体双折射的影响在文献中被称为光折变效应(PR效应)，并被广泛用于记录体全息图(3)。在实践中，公关效应包括以下几个方面。当铁电晶体或压电晶体被强瞬态光(聚焦激光束)局部照射时，在光束内部的晶体体积中会发生可逆的双折射变化。对于一些热释电材料(LiNb03, LiTa03)，这种变化的程度可能高达10-4-10 -3，而且这种效应的存储时间变化范围很广，从BaTi03的几毫秒到LiNb03的几个月。全息记录是通过与记录波束相对应的体积调制来完成的。记录分辨率高达102104行/毫米，可以达到三维存储密度的理论极限(1012bits/cm3)。与照相层相反，这种光存储方法的主要优点是并行处理，包括写入、读出和输出

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DENSHI SHASHIN GAKKAISHI

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