Operating power ICs at 200 degrees

Abstract

Discrete semiconductor devices rated to operate up to 200 degrees C are discussed. It is shown that some aspects of the design used to achieve high-temperature fail-safe operation have resulted in increased device die area, in particular, the stringent layout rules and use of bipolar structures. One of the few outstanding reliability problems for operating devices continually at 200 degrees C is due to the mold compound, and even here experimental materials are available that show promise for improved reliability.<>