A 2.4 GHz SiGe bipolar power amplifier with integrated diode linearizer for WLAN IEEE 802.11b/g applications

2006 IEEE Radio and Wireless Symposium Pub Date : 2006-04-10 DOI:10.1109/RWS.2006.1615146

J.H. Kim, K.Y. Kim, Y.H. Park, Y. Chung, C. Park

引用次数: 15

Abstract

A linear RF power amplifier with integrated reverse biased diode linearizer for IEEE 802.11b/g WLAN terminals is implemented with a 33 GHz-fT, 0.5-mum-SiGe bipolar technology. The proposed linearizer maintains the fixed base voltage of power stage HBTs. The power amplifier exhibits 24.5 dBm of 1-dB compression point (P1dB), with 36% of the power-added efficiency (PAE), and 17 dB of the power gain under 3.3 V power supply. The third-order IMD value is less than - 32.5 dBc at 3 dB back-off from P1dB for the frequency of 2.45 GHz. The fabricated chip size is as small as 1times0.7 mm2, including input/inter-stage matching network and all active bias circuits

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2.4 GHz SiGe双极功率放大器，集成二极管线性放大器，用于WLAN IEEE 802.11b/g应用

采用33 GHz-fT、0.5 μ m- sige双极技术实现了一款用于IEEE 802.11b/g WLAN终端的集成反向偏置二极管线性器的线性射频功率放大器。所提出的线性化器保持功率级hbt的固定基极电压。该功率放大器在3.3 V电源下的1db压缩点(P1dB)为24.5 dBm，功率增加效率(PAE)为36%，功率增益为17 dB。在频率为2.45 GHz时，三阶IMD值小于- 32.5 dBc。制作的芯片尺寸小至1 × 0.7 mm2，包括输入/级间匹配网络和所有有源偏置电路

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2006 IEEE Radio and Wireless Symposium

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