Characteristic Properties of Response of Gas Sensor Si-Based MOS-Diode to Hydrogen

2007 Siberian Conference on Control and Communications Pub Date : 2007-04-20 DOI:10.1109/SIBCON.2007.371324

V. Y. Grisyk, V. Gaman, V.I. Baljuba, T. Davidova, V. Kalygina, I. Lobanov

引用次数: 0

Abstract

The main conditions of physical model of hydrogen influence on Pd-SiO₂-n-Si MOS-diodes are presented. It is proposed that hydrogen atoms (H_a) occurred due to dissociation of H₂ molecules on the surface of Pd electrode diffuse through Pd and SiO₂ layers and are adsorbed on Pd-SiO₂ and SiO₂-n-Si boundaries. It has been showed that in contrast to MOS-capacitor the response to hydrogen is generated due to the processes on the both boundaries.

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气敏硅基mos二极管对氢气的响应特性研究

介绍了氢对Pd-SiO2-n-Si mos二极管物理模型影响的主要条件。提出了钯电极表面H2分子解离产生的氢原子(Ha)通过Pd和SiO2层扩散并吸附在Pd-SiO2和SiO2-n- si边界上。结果表明，与mos电容器相反，对氢的响应是由两个边界上的过程产生的。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2007 Siberian Conference on Control and Communications

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