Towards High-Power Multipliers Using Diamond Schottky Barrier Diodes

Abstract

This work focuses on the unique potential of high-power, high-frequency frequency multipliers using diamond Schottky Barrier Diodes (SBDs). We demonstrate the design, fabrication, and small-signal RF characterization of doublers on single-crystalline diamond (SCD). This is the first attempt to realize a frequency multiplier fully integrated on diamond. The SBDs utilized are developed on a p−/p+ boron-doped SCD wafer. The fabricated structures are compact, occupying an area smaller than 10 mm2 each. Small-signal RF measurements are performed from 50 MHz up to 67 GHz. The results of this initial attempt are very promising for future high-power MMIC multiplier structures for microwave and mm-wave frequencies.