Study of Germanium Nanosheet Channel With Negative Capacitance Field-Effect-Transistor

Abstract

This work demonstrates the germanium nanosheet channel with negative capacitance in gate-all-around field-effect-transistor (Ge NS NC-GAAFET) to reduce the subthreshold slope (SS). The Ge NS NC-GAAFET device structure, fabrication, and electrical are analysis were studied. Moreover, the Ge NS NC-FET reveals high driving current, and high Ion/Ioff ratio (>106). The novel Ge NS NC-FET could suit for future low-power integrated circuit applications.