The Low-Temperature Radiation-Hardened Analog Interfaces of Sensors on the Base of BiJFET Array Chips

Abstract

This article presents the design results of the precision microcircuit of the instrumentation amplifier (IA) based on the fully differential difference op-amp (FDDA) and the double-channel low pass filter (LPF). It shows that the application of such IA leads to the high parameters of the sensor interface in the stability of output offset voltage (200uV < Voo < 200uV) and common-mode rejection in the extended temperature range −197°C ÷ +27°C and on exposure to the neutron flux Fn up to 10¹⁸ n/m² and absorbed radiation dose D up to 1 Mrad. The results of the IA simulation designed on the base of radiation-hardened BiJFet technology (OJSC “Integral”, Minsk) are given.