Aluminum nano interconnects

Proceedings of the IEEE 2004 International Interconnect Technology Conference (IEEE Cat. No.04TH8729) Pub Date : 2004-06-07 DOI:10.1109/IITC.2004.1345681

G. Steinlesberger, G. Schindler, M. Engelhardt, W. Steinhogl, M. Traving

引用次数: 8

Abstract

The physical and technological limitations for aluminium interconnect technology in the deep sub-100 nm regime are investigated. Using a wet chemical process for hard mask trimming the fabrication of nano Al interconnects has been demonstrated. Based on first electrical measurements the electrical size effect of Al interconnects with critical dimensions far below 100 nm as well as the impact of side wall roughness are discussed.

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铝纳米互连

研究了铝互连技术在深度低于100纳米范围内的物理和技术限制。采用湿法化学工艺进行硬掩膜修整，制备了纳米铝互连。在首次电测量的基础上，讨论了临界尺寸远低于100nm的铝互连的电尺寸效应以及边壁粗糙度的影响。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Proceedings of the IEEE 2004 International Interconnect Technology Conference (IEEE Cat. No.04TH8729)

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