Compact GaN-based Stacked Cells for 5G Applications at 26 GHz

Abstract

This work presents the development of two 2-FET stacked cells at 26 GHz in the WIN Semiconductors 150 nm power GaN/SiC technology. Two different compact layouts, based on the same circuit scheme, are designed targeting similar performance in the FR2 5G frequency band. One version favoring distance between components, to relieve electromagnetic cross-talk, and the other favoring instead symmetry. The cells have been conceived as basic building blocks for the development of high-power 5G amplifiers, rather than as stand-alone amplifiers, hence including only input matching and stabilization networks. Based on large-signal simulations on the optimum load, the cells are expected to deliver around 34 dBm with an efficiency higher than 35% at 26 GHz, and a linear gain of 10 dB. The output power performance is maintained from 24.5 GHz to 27.5 GHz, where the saturated efficiency is above 30 % for both cells. The small-signal experimental characterization results are in very good agreement with the simulations, proving the effectiveness of the electromagnetic simulation setup adopted for all the passive structures, despite the challenges posed by the compact layouts.