Dual sources U-shape gate tunnel FETs with high on-current and steep SS

Abstract

The current-voltage characteristics of dual source regions and U-shape-gate tunneling field-effect transistor (DUTFET) is investigated. The U-shape-gate offers the enlarged tunneling area and steeper subthreshold swing (SS). The remarkable good performance makes it very attractive in replacing a conventional tunneling field-effect transistor (TFET), particularly for low-power applications.