Computational Investigation of Microwave Breakdown in HPM Switching and Protection

Pratik Ghosh, B. Chaudhury
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引用次数: 3

Abstract

The 2D simulations of HPM breakdown induced plasma formation in the context of applications such as HPM switching and power limiter for protection of electronic components presented. Breakdown thresholds, the field strength and the initial plasma density that determines breakdown time are reported. The dependence of cutoff time on initial plasma as well as strength of microwave E-field are reported. The transmission and rejection capability of plasma for certain frequency is shown. Further, variations in permittivity and conductivity of breakdown plasma also studied. Study also highlights the importance of correct choice of diffusion coefficient in the given fluid-based model.
HPM开关与保护中微波击穿的计算研究
介绍了在HPM开关和功率限制器等电子元件保护应用中HPM击穿诱导等离子体形成的二维模拟。报道了击穿阈值、场强和决定击穿时间的初始等离子体密度。报道了截止时间与初始等离子体和微波电场强度的关系。给出了等离子体在一定频率下的传输和抑制能力。此外,还研究了击穿等离子体介电常数和电导率的变化。研究还强调了在给定的基于流体的模型中正确选择扩散系数的重要性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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