Evaluation of Knight Landing High Bandwidth Memory for HPC Workloads

S. Salehian, Yonghong Yan
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引用次数: 6

Abstract

The Intel Knight Landing (KNL) manycore chip includes 3D-stacked memory named MCDRAM, also known as High Bandwidth Memory (HBM) for parallel applications that needs to scale to high thread count. In this paper, we provide a quantitative study of the KNL for HPC proxy applications including Lulesh, HPCG, AMG, and Hotspot when using DDR4 and MCDRAM. The results indicate that HBM significantly improves the performance of memory intensive applications for as many as three times better than DDR4 in HPCG, and Lulesh and HPCG for as many as 40% and 200%. For the selected compute intensive applications, the performance advantage of MCDRAM over DDR4 varies from 2% to 28%. We also observed that the cross-points, where MCDRAM starts outperforming DDR4, are around 8 to 16 threads.
Knight Landing高带宽内存对HPC工作负载的评估
英特尔Knight Landing (KNL)多核芯片包括名为MCDRAM的3d堆叠内存,也称为高带宽内存(HBM),用于需要扩展到高线程数的并行应用程序。本文对使用DDR4和MCDRAM的HPC代理应用(包括Lulesh、HPCG、AMG和Hotspot)的KNL进行了定量研究。结果表明,HBM在HPCG中显著提高了内存密集型应用程序的性能,比DDR4提高了3倍,而Lulesh和HPCG的性能分别提高了40%和200%。对于选定的计算密集型应用,MCDRAM比DDR4的性能优势在2%到28%之间。我们还观察到,MCDRAM开始优于DDR4的交叉点大约是8到16个线程。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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