Mirco Signal Wireless-Communication Device Based on GaN-on-Silicon Platform with Light Emitting Diodes

W. Yuan, Xin Li, Xumin Gao, Jia-lei Yuan, Yong-chao Yang, Yongjin Wang
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引用次数: 1

Abstract

In this paper, we demonstrate a photonic wireless-communication device based on GaN-on-silicon platform with membrane light emitting diodes for in-plane ultra-short distance visible light communication (VLC). We utilize two bidirectional InGaN/GaN multiple-quantum-well devices integrated on one chip as signal emitter and receiver, which are operated under light-emitting diode (LED) or photo detector (PD) mode respectively. The peak wavelength 450nm in electroluminescent (EL) spectra is applicable for blue range. As a micro-scale device, it can be operated on higher frequency above 30MHz and the optimum frequency is from 30MHz to 90MHz. The light with direct modulation carrying digital signal is detected by PD and has excellent transmit performance at 50Mbps rate with low inter-symbol interference (ISI). In particular, the integrated device has the lowest bit error rate (BER) at 80MHz bandwidth. The stable transmit frequency and communication rate could be applied for small clients such as smart phone and so on. For further study, the improved rate with better performance will let the client maintain the 4G even the 4G + transmission rate for a long term.
基于硅基氮化镓发光二极管平台的微信号无线通信器件
在本文中,我们展示了一种基于GaN-on-silicon平台和薄膜发光二极管的光子无线通信器件,用于平面内超短距离可见光通信(VLC)。我们利用集成在一个芯片上的两个双向InGaN/GaN多量子阱器件作为信号发射器和接收器,分别在发光二极管(LED)和光电探测器(PD)模式下工作。电致发光光谱的峰值波长为450nm,适用于蓝色范围。作为微型器件,它可以工作在30MHz以上的较高频率,最佳频率为30MHz ~ 90MHz。直接调制携带数字信号的光通过PD检测,传输速率为50Mbps,具有较低的码间干扰(ISI)。特别是集成器件在80MHz带宽下具有最低的误码率(BER)。稳定的传输频率和通信速率可应用于智能手机等小型客户端。进一步研究,提高的速率和更好的性能将使客户端长期保持4G甚至4G +的传输速率。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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