{"title":"The investigation of current sensitivity of the multielement ultraviolet detector based on GaAs","authors":"D. Mokeev, A. Zarubin","doi":"10.1109/SIBCON.2009.5044848","DOIUrl":null,"url":null,"abstract":"The investigation results of multielement ultraviolet detector based on GaAs were demonstrated in the work. Investigated photodetector was compared with silicon photodiode. It was shown the current sensitivity measured at the wave-length 260 nm was 0.08 A/W, that higher by twice than silicon photodiode.","PeriodicalId":164545,"journal":{"name":"2009 International Siberian Conference on Control and Communications","volume":"12 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 International Siberian Conference on Control and Communications","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SIBCON.2009.5044848","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
The investigation results of multielement ultraviolet detector based on GaAs were demonstrated in the work. Investigated photodetector was compared with silicon photodiode. It was shown the current sensitivity measured at the wave-length 260 nm was 0.08 A/W, that higher by twice than silicon photodiode.