An efficient DELOTS Algorithm for low leakage current at nano-scale transistor

A. Rjoub, H. Almanasrah, Shihab Ahmed Kattab
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Abstract

The current switching from μ-technology to n-technology generated a new challenges for CMOS circuit design. The optimization of power and delay together becomes the main issue in CMOS circuits design. Based on transistor level, a new algorithm for optimizing the Power Delay Product (PDP) for digital CMOS circuits is proposed in this paper. This algorithm is composed of three models: Graph Model (GM), Mathematical Model (MM) and Heuristic Model (HM). These Models work homogeneously to enhance the circuit performance (Delay) and reduce the circuit power dissipation (leakage) by selecting the optimal width size for each transistor in the circuit. All the measurements and simulation results of the new approach have been performed under 22nm BSIM4 Foundries. The average improvement in PDP was 31% for Full Adder circuit of 24 transistors and 43% for C17 ISIAC benchmark.
纳米级晶体管低漏电流的DELOTS算法
当前从μ技术到n技术的转换对CMOS电路设计提出了新的挑战。功率和延迟的优化成为CMOS电路设计中的主要问题。基于晶体管级,提出了一种优化数字CMOS电路功率延迟积(PDP)的算法。该算法由图模型(GM)、数学模型(MM)和启发式模型(HM)三种模型组成。这些模型通过选择电路中每个晶体管的最佳宽度尺寸来均匀地工作,以提高电路性能(延迟)并降低电路功耗(泄漏)。新方法的所有测量和仿真结果都是在22nm BSIM4晶圆厂上进行的。对于24个晶体管的全加法器电路,PDP的平均改进为31%,对于C17 ISIAC基准电路,PDP的平均改进为43%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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