Implementation of 1.8V MIPI RFFE slave controller in CMOS 180nm process for 5V RF front-end modules

Seunghyun Jang, Sunwoo Kong, Hui-Dong Lee, Bonghyun Park, Seunghun Wang, Seok-Bong Hyun
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Abstract

In this paper, the implementation results of 1.8V CMOS RFFE slave circuits on 180 nm complementary metal-oxide semiconductor (CMOS) process for 5V RF front-end modules are provided with the measurement results of RFFE communication with a configuration of a master and the designed slave. The implemented RFFE CMOS chip has been designed to comply with MIPI RFFE version 1.1 standard, and consists of PoR, SDATA transceiver, and SCLK receiver. For the experimental evaluation, three RFFE operations were sequentially performed: READ the initial value at register 0x20, WRITE a new value, and READ again the register for checking the operation of the WRITE. The all measured pulse waveforms are in a good agreement with the MIPI RFFE interface specification version 1.1 as designed.
采用CMOS 180nm工艺实现1.8V MIPI RFFE从控制器,用于5V射频前端模块
本文给出了1.8V CMOS RFFE从电路在180nm互补金属氧化物半导体(CMOS)工艺上用于5V射频前端模块的实现结果,并给出了主从配置下RFFE通信的测量结果。所实现的RFFE CMOS芯片设计符合MIPI RFFE 1.1版标准,由PoR、SDATA收发器和SCLK接收器组成。对于实验评估,依次执行三个RFFE操作:读取寄存器0x20的初始值,写入新值,再次读取寄存器以检查WRITE操作。所有测量的脉冲波形与设计的MIPI RFFE接口规范版本1.1一致。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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