Comparison of Optoelectronic Properties of Doped and Pristine Nanotubes Based on Carbon and Tungsten Disulfide

Maxim I. Paukov, A. Goldt, G. Komandin, A. Syuy, Dmitry I. Yakubovskiy, S. Novikov, R. Tenne, A. Zak, A. Nasibulin, A. V. Arsenin, V. Volkov, M. Burdanova
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Abstract

: The optoelectronic properties of one-dimensional nanomaterials play an important role in electronic devices. In the present work, pristine and doped Carbon Nanotubes (CNTs) and WS 2 Nanotubes (WS 2 NT) are investigated by using absorption, Raman, and THz time-domain spectroscopy (THz-TDS). We demonstrate that the one-dimensional materials share similar properties asso-ciated with curvature and location in comparison with two-dimensional materials. In addition, we show how doping influence to these properties. Our results pave the way toward the application of such materials as a prospective material for optoelectronic devices including future wireless com-munication devices.
二硫化碳钨掺杂与原始纳米管光电性能比较
一维纳米材料的光电性能在电子器件中起着重要的作用。本文采用吸收光谱、拉曼光谱和太赫兹时域光谱(THz- tds)对原始碳纳米管(CNTs)和掺杂碳纳米管(ws2nt)进行了研究。我们证明,与二维材料相比,一维材料具有与曲率和位置相关的相似特性。此外,我们还展示了掺杂对这些性质的影响。我们的研究结果为这种材料作为光电子设备(包括未来的无线通信设备)的潜在材料的应用铺平了道路。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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