A Novel Series-Parallel Design of The 3.6kV/400A SiC Austin SuperMOS

Abstract

A 3.6kV/400A SiC half-bridge intelligent power module (IPM) is developed based on a novel series-parallel approach of lower voltage devices. Twenty-four 1200V SiC MOSFETs are integrated in the IPM together with a high isolation voltage gate power supply, gate driver and overcurrent protection. This paper proposes and analyzes the novel series-parallel approach which guarantees dynamic voltage sharing amount series connected devices and current sharing among paralleled branches. Experimental results are included to demonstrate the superior performance of the developed high power IPM.