A 10Gb/s Burst-Mode Laser Diode Driver for IEEE 802.3av 10G-EPON Applications

2010 Second International Conference on Future Networks Pub Date : 2010-01-22 DOI:10.1109/ICFN.2010.88

Ye Lin, En Zhu, Gaowei Gu

引用次数: 4

Abstract

The IEEE standards board has announced the approval of the 10G-EPON standard, IEEE Std. 802.3av. In this paper, a 10Gb/s burst-mode laser diode driver for the symmetric-rate 10G-EPON ONU applications is described. It is designed with a low-cost 0.18µm CMOS process. Post-simulation results that it has a speed of 10.3125Gb/s, and is able to provide up to 35mA modulation current under a 1.8V power supply. The burst turn-on/-off delays are both less than 1ns. The dimension of the laser diode driver is 575µm × 675µm.

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用于IEEE 802.3av 10G-EPON应用的10Gb/s突发模式激光二极管驱动器

IEEE标准委员会宣布批准了10G-EPON标准IEEE Std. 802.3av。本文介绍了一种用于对称速率10G-EPON ONU应用的10Gb/s突发模式激光二极管驱动器。它采用低成本的0.18µm CMOS工艺设计。仿真结果表明，该芯片的传输速度为10.3125Gb/s，在1.8V电源下可提供35mA的调制电流。突发开/关延时均小于1ns。激光二极管驱动器尺寸为575µm × 675µm。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2010 Second International Conference on Future Networks

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