Flexible Microcrystalline Silicon Source-Gated Transistors with Negliglible DC Performace Degradation at 2.5 mm Bending Radius

Abstract

The first flexible source-gated transistors (SGTs) in microcrystalline silicon have been fabricated and characterized under bending stress. As SGTs are contact controlled devices, the channel does not modulate drain current, however its geometry has implications for operation. We show how reduced channel length in SGTs helps promote negligible threshold voltage shifts when strain is introduced with a radius of r = 2.5 mm.