Simulation and design of an active MQW layer with high static gain and absorption modulation

M. Peschke, T. Knoedl, B. Stegmueller
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引用次数: 14

Abstract

We present detailed theoretical and experimental investigations on gain and absorption spectra of multi-type AlGaInAs QW structures in the 1.3 /spl mu/m wavelength regime. Such QW combination offer the possibility of efficient forward and reverse operation, e.g. as required for monolithically integrated laser-modulator devices. Measurement results are in good agreement with theoretical predictions, achieving a basic modal absorption as low as 60 cm/sup -1/, a maximum absorption change of 100 cm&/sup -1/V/sup -1/ and a DFB threshold current of 17 mA at room temperature. With the developed procedure and extracted parameters, a powerful tool is available to optimize the static gain and absorption modulation of single-and multi-type AlGaInAs QWs.
具有高静态增益和吸收调制的有源MQW层的仿真与设计
在1.3 /spl mu/m波长范围内,对多种类型AlGaInAs QW结构的增益和吸收光谱进行了详细的理论和实验研究。这样的量子波组合提供了有效的正向和反向操作的可能性,例如,单片集成激光调制器设备所需要的。测量结果与理论预测一致,在室温下实现了低至60 cm/sup -1/的基本模态吸收,最大吸收变化为100 cm/sup -1/V/sup -1/, DFB阈值电流为17 mA。利用所建立的程序和提取的参数,为优化单型和多型AlGaInAs量子阱的静态增益和吸收调制提供了有力的工具。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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