Ion implanted InSb photodetectors

Abstract

Planar n⁺p- and p⁺n-photodetectors have been made in InSb by implantation of sulfur and beryllium, n⁺p-detectors show a flat response from 4.5 to 5.3 µm, resulting from the Burstein-Moss effect, whereas the p⁺n-detectors show the usual behavior of the response with a shift in the cutoff-wavelength from 4.8 to 5.5 µm depending on the substrate doping. The obtained peak detectivities are 3 × 10¹¹cmHz^1/2W^-1for sulfur implanted and 10¹²cmHz^1/2W^-1for beryllium implanted diodes at a field of view of 0°. The corresponding externalquantum efficiencies are 40 to 60% for all detectors.