An Energy-Efficient Voltage Step-up System for 3D NAND Flash using Charge-Compensating Regulator

H. Jeong, Seonghwan Cho
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引用次数: 1

Abstract

This paper presents an energy-efficient wordline driver for a triple level cell 3D NAND flash. Unlike conventional circuit that has a large charge pump and high-voltage regulators operating under the inefficient stepped-up voltage, the proposed circuit has a distributed charge pump (CP) that directly drive the wordlines, aided by a charge compensating regulator that operate under the nominal supply and produces a ripple free output. The proposed voltage driver for a 39 wordline layer is fabricated in 180nm UHV process and it consumes 99.8nJ from a 2.2V during 1 unit of program pulse and verify period, which is more than 2.1x improvement in energy efficiency compared to the conventional scheme.
基于电荷补偿调节器的3D NAND闪存节能升压系统
提出了一种用于三能级单元三维NAND闪存的节能字线驱动器。与传统电路不同的是,该电路具有一个大型电荷泵和高压稳压器,在低效的升压下工作,该电路具有一个分布式电荷泵(CP),直接驱动字线,并辅以一个电荷补偿稳压器,在标称电源下工作,产生无纹波输出。所提出的39字线层电压驱动器采用180nm特高压工艺制作,在1个单位程序脉冲和验证周期内,从2.2V电压消耗99.8nJ,与传统方案相比,能效提高2.1倍以上。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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