{"title":"A low-voltage high-speed high-linearity MOSFET-only analog bootstrapped switch for sample-and-hold circuits","authors":"Peyman Pouya, Abdolrasoul Ghasemi, H. Aminzadeh","doi":"10.1109/KBEI.2015.7436081","DOIUrl":null,"url":null,"abstract":"In this paper, a low-voltage high-speed high-linearity MOSFET-only analog bootstrapped switch for sample-and-hold circuits is successfully designed and implemented in TSMC 0.18 μm standard digital complementary metal-oxide-semiconductor (CMOS) technology. In the proposed structure, constant capacitor of the analog bootstrapped switch is replaced with anti-parallel depletion-mode metal-oxide-semiconductor (MOS) devices. In addition to area efficiency achieved by replacing the capacitor with MOS transistors, the integration of the analogue bootstrapped switch would become compatible with standard digital CMOS technologies. Circuit-level simulations show that at 25 MHz input signal and 250 MHz sampling clock frequency with 0.9Vpp supply voltage, the proposed switch performs well and provides a high linearity.","PeriodicalId":168295,"journal":{"name":"2015 2nd International Conference on Knowledge-Based Engineering and Innovation (KBEI)","volume":"45 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"11","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 2nd International Conference on Knowledge-Based Engineering and Innovation (KBEI)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/KBEI.2015.7436081","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 11
Abstract
In this paper, a low-voltage high-speed high-linearity MOSFET-only analog bootstrapped switch for sample-and-hold circuits is successfully designed and implemented in TSMC 0.18 μm standard digital complementary metal-oxide-semiconductor (CMOS) technology. In the proposed structure, constant capacitor of the analog bootstrapped switch is replaced with anti-parallel depletion-mode metal-oxide-semiconductor (MOS) devices. In addition to area efficiency achieved by replacing the capacitor with MOS transistors, the integration of the analogue bootstrapped switch would become compatible with standard digital CMOS technologies. Circuit-level simulations show that at 25 MHz input signal and 250 MHz sampling clock frequency with 0.9Vpp supply voltage, the proposed switch performs well and provides a high linearity.