An InGaP/GaAs HBT MMIC Power Amplifier with an Integrated Diode Linearizer

2005 IEEE Conference on Electron Devices and Solid-State Circuits Pub Date : 2005-12-19 DOI:10.1109/EDSSC.2005.1635239

M. Zhu, H. Yang, H.Y. Zhang, X.C. Liu

引用次数: 0

Abstract

An InGaP/GaAs heterojunction bipolar transistor (HBT) monolithic microwave integrated circuit (MMIC) power amplifie (PA) using an improved linearization technique is studied in this paper. This improved linearization technique provides high efficiency at different amplification ofthe modulation as well as high operation voltage. Also the gain compression and the phase distortion of the HBT are effectively improved with no additional DC consumption. The fabricated HBT MMIC PA exhibits an output power of 24 dBm and a power-added efficiency as high as 37% at an operation voltage of6.5 V.

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带集成二极管线性化器的InGaP/GaAs HBT MMIC功率放大器

本文研究了一种采用改进线性化技术的InGaP/GaAs异质结双极晶体管(HBT)单片微波集成电路(MMIC)功率放大器。这种改进的线性化技术提供了不同放大调制的高效率和高工作电压。在不增加直流消耗的情况下，有效地改善了HBT的增益压缩和相位畸变。在工作电压为6.5 V时，制备的HBT MMIC PA输出功率为24 dBm，功率附加效率高达37%。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2005 IEEE Conference on Electron Devices and Solid-State Circuits

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