Studies on stacking faults and crystalline defects in fabrication silicon wafer substrate

Y. Hua, S.L. Lim, L. An, Z.R. Guo, Y.K. Fan
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引用次数: 2

Abstract

Silicon crystalline defects in production silicon wafers affect the yield. In this paper, the 155 Wright etch was used to identify the root causes of silicon crystalline defects. A few low yield cases are studied and the different types of crystalline defects and their possible root causes and preventative measures taken are discussed.
硅片衬底制造中的层错和晶体缺陷研究
硅晶圆生产中存在的硅晶缺陷会影响良率。在本文中,使用155莱特蚀刻来确定硅晶体缺陷的根本原因。研究了几个低良率的案例,讨论了不同类型的晶体缺陷及其可能的根本原因和预防措施。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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