Nano-Structure Studies of Perhydropolysilazane - Derived Silica Thin Layers

T. Niizeki, Y. Hasegawa, K. Akutsu-Suyama
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Abstract

The structure of perhydropolysilazane (PHPS)-derived silica (PDS) thin layers which were synthesized on the surface of the Si-, Al 2 O 3 -, MgO-, and polyvinyl alcohol PVA-substrate have been studied by neutron reflectivity (NR) analyses. The results suggested that uniform PDS thin layers were synthesized on the surface of the substrates and the density of the layers varied depending on the type of substrate. Since the change in PDS density is correlated with the p K a value of the OH group on the substrate, it can be suggested that the acidity of the substrate would be one of the main factors determining the density of the coated PDS thin layers. On the other hand, the fine nanostructure of the PDS thin layer in the deep-buried condition have been poorly understood because a large background scattering originating from the sample matrix is a major obstacle for fine-structure analysis of a nanometric layer buried in a bulk material. As polarization analysis can decrease undesired scattering in a NR profile, we performed NR experiments with polarization analysis on a polypropylene (PP)/PDS/Si substrate sample, having a deep-buried layer of SiO 2 for increasing the amplitude of the Kiessig fringes in the higher scattering vector ( Q z ) region of the NR profiles in the sample by decreasing the undesired background scattering. Fitting and Fourier transform analysis results of the NR data indicated that the synthesized PDS layer remained between the PP plate and Si substrate with a thickness of approximately 109 Å. Furthermore, the scattering length density of the PDS layer, obtained from the background subtracted data appeared to be more accurate than that obtained from the raw data. Although the density of the PDS layer was lower than that of natural SiO 2 , the PDS thin layer had adequate mechanical strength to maintain a uniform PDS layer in the depth-direction under the deep-buried condition.
过氢聚硅氮烷衍生二氧化硅薄层的纳米结构研究
用中子反射率(NR)分析了在Si-、Al -、MgO-和聚乙烯醇pva衬底表面合成的过氢聚硅氮烷(PHPS)衍生二氧化硅(PDS)薄层的结构。结果表明,在衬底表面合成了均匀的PDS薄层,其密度随衬底类型的不同而变化。由于PDS密度的变化与底物上OH基团的kp值相关,因此可以认为底物的酸度是决定涂层PDS薄层密度的主要因素之一。另一方面,人们对深埋条件下PDS薄层的精细纳米结构知之甚少,因为来自样品基体的大背景散射是对埋在块状材料中的纳米层进行精细结构分析的主要障碍。由于极化分析可以减少NR剖面中不希望的散射,我们在聚丙烯(PP)/PDS/Si衬底样品上进行了偏振分析的NR实验,该样品具有深埋的sio2层,通过减少不希望的背景散射来增加样品中NR剖面中高散射矢量(Q z)区域的Kiessig条纹的振幅。NR数据的拟合和傅里叶变换分析结果表明,合成的PDS层保持在PP板和Si衬底之间,厚度约为109 Å。此外,从背景减去数据得到的PDS层散射长度密度比原始数据得到的更准确。虽然PDS层的密度低于天然sio2,但在深埋条件下,PDS薄层具有足够的机械强度,可以在深度方向上保持均匀的PDS层。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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