HEMTs extrinsic noise model for millimeter waves integrated circuits design

Abstract

We present a new model to determine the noise performances of HEMTs in the millimeter wave range from characterizations below 40 GHz. This work describes an extrinsic noise model based on two equivalent noise temperatures (Tin and Tout) both independent from frequency and gate width. This extrinsic noise model is well suited for right first time mm-wave circuit design. The main reason is that only two parasitic (Lg and Cpg) have to be accurately determined. Then the determination of the equivalent temperatures Tin and Tout is less sensitive to measurements uncertainties and parasitic extraction than conventional two temperatures intrinsic noise model.