M. Ugajin, A. Yamagishi, J. Kodate, M. Harada, T. Tsukahara
{"title":"A 1-V CMOS/SOI bluetooth RF transceiver for compact mobile applications","authors":"M. Ugajin, A. Yamagishi, J. Kodate, M. Harada, T. Tsukahara","doi":"10.1109/VLSIC.2003.1221179","DOIUrl":null,"url":null,"abstract":"A Bluetooth RF transceiver in 0.2-/spl mu/m CMOS/SOI achieves 1-V operation and paves the way for further system-size reduction by using a small NiH battery. The transceiver integrates a T/R switch, an image-reject mixer, a quadrature demodulator, gm-C filters, an LC-tank voltage-controlled oscillator, a PLL, and a power amplifier. The phase shifter in the quadrature demodulator is tuned dynamically to deal with carrier-frequency drift. A gm cell in the filters uses depletion-mode PMOS transistors and has a folded structure. The transceiver shows -77-dBm sensitivity at 0.1% BER.","PeriodicalId":270304,"journal":{"name":"2003 Symposium on VLSI Circuits. Digest of Technical Papers (IEEE Cat. No.03CH37408)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"12","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2003 Symposium on VLSI Circuits. Digest of Technical Papers (IEEE Cat. No.03CH37408)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIC.2003.1221179","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 12
Abstract
A Bluetooth RF transceiver in 0.2-/spl mu/m CMOS/SOI achieves 1-V operation and paves the way for further system-size reduction by using a small NiH battery. The transceiver integrates a T/R switch, an image-reject mixer, a quadrature demodulator, gm-C filters, an LC-tank voltage-controlled oscillator, a PLL, and a power amplifier. The phase shifter in the quadrature demodulator is tuned dynamically to deal with carrier-frequency drift. A gm cell in the filters uses depletion-mode PMOS transistors and has a folded structure. The transceiver shows -77-dBm sensitivity at 0.1% BER.