Electrical Insulation Design and Accurate Estimation of Temperature via an Electrothermal Model for a 10 kV SiC Power Module Packaging

M. Tousi, M. Ghassemi
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引用次数: 5

Abstract

Wide-bandgap (WBG) power devices can tolerate higher currents and voltages than their silicon (Si)-based counterparts. However, the realization of their superior characteristics is tied to the reliability of their packaging, where thermal management and reliable electrical insulation design are the most challenging tasks to this end. Not taking care of the former one leads to thermal runaway, and the latter one causes the electric breakdown of the whole module. In this paper, the packaging design of a 10-kV SiC diode is studied by addressing both challenges above. Electrical insulation design is carried out through a finite element method (FEM) electric field calculation model developed in COMSOL Multiphysics, meeting both the one-minute insulation and PD tests based on IEC 61287–1. Through developing an electrothermal model and for considered dimensions, an accurate estimation of the junction temperature is obtained to determine the maximum load current of the module.
基于电热模型的10kv SiC电源模块封装电绝缘设计及精确温度估算
宽带隙(WBG)功率器件可以承受比硅基(Si)功率器件更高的电流和电压。然而,其优越特性的实现与其封装的可靠性有关,其中热管理和可靠的电绝缘设计是最具挑战性的任务。前者不注意会导致热失控,后者会导致整个模块的电击穿。本文针对上述两个挑战,研究了10kv SiC二极管的封装设计。电气绝缘设计通过COMSOL Multiphysics开发的有限元法(FEM)电场计算模型进行,同时满足基于IEC 61287-1的一分钟绝缘和PD测试。通过建立电热模型并考虑尺寸,获得结温的准确估计,从而确定模块的最大负载电流。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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