Slow light and dynamic buffer capability in two different photonic crystal waveguides

Zaineb Gharsallah, M. Najjar, V. Janyani
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引用次数: 4

Abstract

In this paper, we investigated two designed structures for application in optical buffers with using photonic crystal technology. In the first structure, silicon slab is used with air holes in hexagonal lattice. However, in the second structure, we used Lithium Niobate slab with air holes. In the two cases, slow light criteria and optical buffering is demonstrated with bit length, delay time and buffer capacity equal to 7.5 μm, 166 ps, and 132 bits for silicon structure and 5.1 μm, 833 ps and 193 bits for Lithium Niobate structure, respectively. Moreover, we developed a dynamic buffer taking advantage of electro-optic effect. We show an external control of the buffer parameters for both structures. The simulations demonstrate that the bit length, the delay time and storage capacity change with the applied voltage and can reach as high as 9.1 μm, 116.6 ps and 125.4 bits for silicon structure and 6.9 μm, 833 ps and 193 bits for Lithium structure, respectively. These results prove that the suggested structures are promising for compact and high performance optical buffering application.
两种不同光子晶体波导的慢光和动态缓冲能力
本文研究了利用光子晶体技术设计的两种用于光学缓冲器的结构。在第一种结构中,硅板在六角形晶格中带有气孔。而在第二种结构中,我们使用了带气孔的铌酸锂板。在这两种情况下,证明了慢光标准和光缓冲,硅结构的位长、延迟时间和缓冲容量分别为7.5 μm、166 ps和132 bits,铌酸锂结构的位长、延迟时间和缓冲容量分别为5.1 μm、833 ps和193 bits。此外,我们还开发了一种利用电光效应的动态缓冲器。我们展示了两个结构的缓冲参数的外部控制。仿真结果表明,该系统的位长、延迟时间和存储容量随外加电压的变化而变化,硅结构的位长、延迟时间和存储容量分别高达9.1 μm、116.6 ps和125.4 bits,锂结构的位长、延迟时间和存储容量分别高达6.9 μm、833 ps和193 bits。这些结果证明了所建议的结构在紧凑和高性能的光学缓冲应用中是有希望的。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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