Compact model for the electronic properties of edge-disordered graphene nanoribbons

2011 12th Intl. Conf. on Thermal, Mechanical & Multi-Physics Simulation and Experiments in Microelectronics and Microsystems Pub Date : 2011-04-18 DOI:10.1109/ESIME.2011.5765816

A. Y. Goharrizi, M. Pourfath, M. Fathipour, H. Kosina

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引用次数: 5

Abstract

The electronic properties of graphene nano-ribbons in the presence of line-edge roughness scattering are studied. The conductance, the mean free path, and the localization length of carriers are analytically derived using an effective mass model for the band structure. The model developed provides a deep insight into the operation of graphene nanoribbon devices in the presence of line-edge roughness. The effects of geometrical parameters on the conductance of graphene nanoribbons are estimated assuming a diffusive transport regime. However, in the presence of disorder, localization of carriers can occur, which can significantly reduce the conductance of the device. The effect of localization on the conductance of rough nanoribbons is studied analytically. Since this regime is not suitable for the operation of electronic devices, one can employ these models to obtain critical geometrical parameters to suppress the localization of carriers in graphene nanoribbon devices.

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边缘无序石墨烯纳米带电子特性的紧凑模型

研究了线边粗糙度散射下石墨烯纳米带的电子特性。利用能带结构的有效质量模型解析导出了载流子的电导、平均自由程和局域化长度。所开发的模型提供了对存在线边缘粗糙度的石墨烯纳米带器件的操作的深入了解。假设石墨烯纳米带为扩散输运，估计几何参数对其电导率的影响。然而，在无序存在的情况下，载流子的局部化会发生，这会显著降低器件的电导。分析研究了局部化对粗糙纳米带电导的影响。由于这种状态不适合电子器件的运行，因此可以利用这些模型来获得关键的几何参数，以抑制石墨烯纳米带器件中载流子的局部化。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2011 12th Intl. Conf. on Thermal, Mechanical & Multi-Physics Simulation and Experiments in Microelectronics and Microsystems

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